Operating Temperature (°C):

-40 to 100

Size of Active Area (mm):

10 Dia.

Storage Temperature (°C):

-55 to 125

Rise Time (ns):

3.00

Responsivity @ 970nm (A/W):

Minimum: 0.6
Typical: 0.65

Capacitance @ V_R=-10V (pF):

60.00

Active Area (mm²):

19.6

Noise Equivalent Power NEP (W/ Hz^1/2):

1.9 x 10^-14 @ -10 V, 970nm

Maximum Reverse Voltage (V):

30.00

Model Number:

SPOT-9DMI

Connector:

43 / LoProf

Dark Current @ V_R=-10V (nA):

Maximum: 10
Typical: 0.5

Element Gap (mm):

0.010

Regulatory Compliance

RoHS:

Compliant

Certificate of Conformance:

View

Product Family Description

High Stability Over Temperature and Time
Excellent Resolution, High Accuracy, Ultra-Low Dark Current
Two or Four Separate Active Area Segments
Segmented InGaAs Photodiodes Also Available

Segmented Photodiodes are designed for a wide variety of applications that require high stability and fast response times. Featuring position resolutions of greater than 0.1μm, Segmented Photodiodes are ideal for surface profiling, position measurement, alignment, or targeting. Segmented Photodiodes are segmented into either two or four separate active areas and have spectral response ranges from 350 – 1100nm. The segmented regions allow various measurement profiles on a single detector.

19.6mm2 Four-Element Segmented Photodiode

Regulatory Compliance

Product Family Description

19.6mm² Four-Element Segmented Photodiode